? 2006 ixys all rights reserved 1 - 2 0627 vmo 80-05p1 power mosfet in eco-pac 2 single mosfet die i d25 =82a v dss = 500 v r dson =50m *ntc optional i k10 x18 l n 9 a1 k13 k15 preliminary data sheet symbol conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 5 ma 500 v v gs(th) v ds = v gs , i d = 8 ma 2 4 v i gss v gs = 20 v, v ds = 0 100 na i dss v ds = v dss , t j = 25c 100 a v gs = 0 v, t j = 125c 2 ma r ds(on) v gs = 10 v, i d = i t , 1) 50 m g fs v ds = 10 v, i d = i t , 1) 45 s c iss 9400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1280 pf c rss 460 pf t d(on) 45 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i t 60 ns t d(off) r g = 1 (external) 120 ns t f 45 ns q g(on) 330 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 55 nc q gd 155 nc r thjc 0.30 k/w r thck with heatsink compound (0.42 k/m.k; 50 m) 0.15 k/w caution : these devices are sensitive to electrostatic discharge. users should observe proper esd handling precautions. features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 3000 v electrical isolation ? low drain to tab capacitance(< 25 pf) ? low r ds(on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? fast intrinsic rectifier ? ul certified, e 148688 applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? ac motor control advantages ? easy assembly ? space savings ? high power density mosfet symbol conditions maximum ratings v dss t j = 25c to 150c 500 v v dgr t j = 25c to 150c; r gs = 1 m 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25c 82 a i d80 t c = 80c 62 a e ar t c = 25c 60 mj e as t c = 25c 3 j dv/dt i s < i dm , di/dt < 100 a/s, v dd < v dss 5 v/ns t j < 150c, r g = 2 p d t c = 25c 400 w
? 2006 ixys all rights reserved 2 - 2 0627 vmo 80-05p1 dimensions in mm (1 mm = 0.0394") source-drain diode characteristic values (t j = 25c, unless otherwise specified) symbol conditions min. typ. max. i s v gs = 0 v 85 a i sm repetitive; pulse width limited by t jm 340 a v sd i f = i s , v gs = 0 v 1.5 v t rr 250 ns q rm i f = 50a,-di/dt = 100 a/s, v r = 100 v 1.4 c i rm 13 a note: 1) pulse test, t < 300 s, duty cycle d < 2% 2) i t test current: i t = 25 a module symbol conditions maximum ratings t vj -40...+150 c t stg -40...+125 c v isol i isol < 1 ma; 50/60 hz; t = 1 s 3600 v~ m d mounting torque (m4) 1.5 - 2.0 nm a max. allowable acceleration 50 m/s 2 symbol conditions characteristic values min. typ. max. d s creepage distance on surface (pin to heatsink) 11.2 mm d a strike distance in air (pin to heatsink) 11.2 mm weight 24 g
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